LASCR - Light Activated Silicon Control Rectifier

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The LASCR is triggered into the Conduction state when the light falls on it, the operation of LASCR is similar to the ordinary SCR except that its gate can be triggered by light.

LASCR Circuit Symbol

LASER Construction

The LASCR (Light Activated Silicon Control Rectifier) is consist on four layer of semiconductor which forms PNPN or NPNP structure, it has tree junction J1 , J2  and J3 and also three terminals, the anode terminal of LASCR is connected to the P-Type of material of PNPN structure and the cathode terminal is connected to the N-Type  layer of the Silicon Control Rectifies while the gate of the LASCR is connected to the P-Type of material near to the cathode, as shown in the given Figure.

Operation / Working of LASCR

The LASCR (Light Activated Silicon Control Rectifier) start conduction when it is forward biased. For this purpose the cathode is kept at negative positional and anode is at positive positional. We apply a positive clock at the gate terminal and so the Silicon Control Rectifies turns ON.

When forward bias voltage is applied to the LASCR (Light Activated Silicon Control Rectifier), or applied light of a required level the junction J1 and J3 become forward bias while the junction J2 become reverse bias. When we apply a clock pulse at the gate terminal, the junction J2 become forward bias and the LASCR (Light Activated Silicon Control Rectifier) start conduction.

The LASCR (Light Activated Silicon Control Rectifier) turn ON and OFF very quickly, At the OFF state the LASCR (Light Activated Silicon Control Rectifier) provide infinity resistance and in ON state, it offers very low resistance, which is in the range of 0.01Ω to 1Ω

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